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75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
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1591.

75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 Open Details in New Window [Oct 28, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220
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1592.

160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode Mur6040DCT to-3p
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1593.

60A 400V Fast Recovery Diode Mur6040DCT to-3p Open Details in New Window [Sep 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet
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1594.

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
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1595.

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
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1596.

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet
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1597.

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 30, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262
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1598.

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 Open Details in New Window [Jun 30, 2025]

PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Advanced Thyristor Module with High-Quality Diode and Rectifier Semiconductor
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1599.

Advanced Thyristor Module with High-Quality Diode and Rectifier Semiconductor Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Experience the future of power management with our groundbreaking N and P-Channel SCR Thyristor Control Power Module. This module is engineered to ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Premium Thyristor Module with Diode and Rectifier Semiconductor Technology
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1600.

Premium Thyristor Module with Diode and Rectifier Semiconductor Technology Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Discover the awe-inspiring capabilities of our innovative N and P-Channel SCR Thyristor Control Power Module. Expertly engineered for the most ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Wholesale Price Mdk 55A 1600V Thyristor Module for Rectifiers
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1601.

Wholesale Price Mdk 55A 1600V Thyristor Module for Rectifiers Open Details in New Window [Jun 26, 2025]

Product Description Thyristor Module High Power Handling Capacity: Discover our revolutionary N and P-Channel SCR Thyristor Control Power Module, purpose-built for the most rigorous high-power demands. With a ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

20A 45V Schottky Barrier Diode Mbr2045CT to-220
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1602.

20A 45V Schottky Barrier Diode Mbr2045CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottky Barrier Diode Mbr10200CT to-220
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1603.

10A 200V Schottky Barrier Diode Mbr10200CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251
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1604.

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252
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1605.

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd