Jiangsu Profile
Product List
1531. 180A 80V N-Channel Enhancement Mode Power Mosfet Dh8004 to-220c 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHI8004/ DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1532. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...
1533. 50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1534. 200V/11mΩ /110A N-Mosfet DSG108n20na to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1535. 90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
1536. 7A 700V N-Channel Enhancement Mode Power Mosfet D7n70 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT D7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
1537. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1538. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
1539. 13A 500V N-Channel Enhancement Mode Power Mosfet 13n50 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1540. 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
1541. 7.5A 650V N-Channel Enhancement Mode Power Mosfet 8n65 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.5 A (T=100ºC) 4.8 A Drain ...
1542. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
1543. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS02 2N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1544. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1545. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
