Jiangsu Profile
Product List
1531. 40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1532. 100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1533. 30A 100V Schottky Barrier Diode Mbrd30100CT to-252b [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...
1534. 11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1535. 37A 650V N-Channel Sic Power Mosfet S37n65D to-247 [Jun 24, 2024]
[Jun 24, 2024] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...
1536. 21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
1537. 180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1538. 4A 650V Sic Schottky Barrier Diode Dcgt04D65g4 to-220-2L [Jun 24, 2024]
[Jun 24, 2024] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1539. 100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1540. 34mm 75A 1200V Half Bridge IGBT Module [Jun 24, 2024]
[Jun 24, 2024] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1541. 4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
1542. 170A 100V N-Channel Enhancement Mode Power Mosfet DSG030n10n3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
1543. 100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...
1544. 60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH0159/DHE015 9/DHB0159/DHD0159 DHF0159 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1545. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
