Jiangsu Profile
Product List
1606. 110A 85V N-Channel Enhancement Mode Power MOSFET DHS055N85D TO-252 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS055N85/DHS055N85E DHS055N85D/DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1607. 30A 60V P-Channel Enhancement Mode Power MOSFET DH400P06LD TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1608. 10.6A 650V N-Channel Super Junction Power MOSFET DJF380N65T TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1609. 180A 85V N-Channel Enhancement Mode Power MOSFET DSG041N08NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1610. 85A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06D TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
1611. 49A 80V N-Channel Enhancement Mode Power MOSFET DH116N08D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1612. 12A 600V N-Channel Enhancement Mode Power MOSFET F12N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1613. 140A 80V N-Channel Enhancement Mode Power MOSFET E140N08 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
1614. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P28 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1615. 35A 120V N-Channel Enhancement Mode Power MOSFET DSD270N12N3 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...
1616. 40A 300V Fast Recovery Diode MUR4030DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1617. 7A 650V N-Channel Enhancement Mode Power MOSFET 7N65 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1618. 60A 400V Fast Recovery Diode MUR6040DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1619. 240A 100V N-Channel Enhancement Mode Power MOSFET DHS025N10 TO-220C [Aug 09, 2026]
[Aug 09, 2026] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
1620. 18A 200V N-Channel Enhancement Mode Power MOSFET 640 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
