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80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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1606.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b
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1607.

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 600V Fast Recovery Diode Mur860CT to-220c
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1608.

8A 600V Fast Recovery Diode Mur860CT to-220c Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247
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1609.

31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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1610.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
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1611.

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247
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1612.

40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b
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1613.

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 600V Fast Recovery Diode Murf1660CT to-220f
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1614.

16A 600V Fast Recovery Diode Murf1660CT to-220f Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 400V Fast Recovery Diode Mur40fu40CT to-220f
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1615.

40A 400V Fast Recovery Diode Mur40fu40CT to-220f Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 600V N-Channel Enhancement Mode Power Mosfet F5n60 to-220f
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1616.

5A 600V N-Channel Enhancement Mode Power Mosfet F5n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
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1617.

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b
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1618.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Schottkybarrierdiode Mbr60200CT to-220c
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1619.

60A 200V Schottkybarrierdiode Mbr60200CT to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 500V N-Channel Enhancement Mode Power Mosfet F10n50 to-220f
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1620.

10A 500V N-Channel Enhancement Mode Power Mosfet F10n50 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd