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100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263
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1681.

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263
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1682.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263
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1683.

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263
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1684.

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 10A Sic Schottky Barrier Diode Dce10d65g4 to-263
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1685.

650V 10A Sic Schottky Barrier Diode Dce10d65g4 to-263 Open Details in New Window [Jun 23, 2025]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b
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1686.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263
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1687.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263
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1688.

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn
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1689.

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

45A 300V Fast Recovery Diode Mur4530DCT to-3pn
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1690.

45A 300V Fast Recovery Diode Mur4530DCT to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode Mur6020nct to-3pn
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1691.

60A 200V Fast Recovery Diode Mur6020nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn
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1692.

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L
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1693.

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L Open Details in New Window [Jun 23, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e
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1694.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030nct to-3pn
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1695.

60A 300V Fast Recovery Diode Mur6030nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd