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180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263
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1711.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263
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1712.

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn
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1713.

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

45A 300V Fast Recovery Diode Mur4530DCT to-3pn
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1714.

45A 300V Fast Recovery Diode Mur4530DCT to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode Mur6020nct to-3pn
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1715.

60A 200V Fast Recovery Diode Mur6020nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn
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1716.

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L
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1717.

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L Open Details in New Window [Jun 23, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e
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1718.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030nct to-3pn
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1719.

60A 300V Fast Recovery Diode Mur6030nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 650V Sic Schottky Barrier Diode Dce08d65g4 to-263
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1720.

8A 650V Sic Schottky Barrier Diode Dce08d65g4 to-263 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263
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1721.

250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f
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1722.

13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn
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1723.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263
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1724.

100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263
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1725.

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd