Jiangsu Profile
Product List
1786. NPN Epitaxial Silicon Transistor Bu406 to-220c 
[Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
1787. Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1788. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...
1789. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1790. 34mm 75A 1200V Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1791. 13A 650V N-Channel Super Junction Power Mosfet Dhsj13n65 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1792. 11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1793. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1794. 10A 200V Fast Recovery Diode D92-02b to-3p **%off [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
1795. 80A 60V N-Channel Enhancement Mode Power Mosfet D80n06 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
1796. 100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1797. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
1798. 40A 100V Schottkybarrierdiode Mbrf40100CT to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1799. 100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...
1800. 210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
