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China Supplier Zhendi Manufacturer SCR Thyristor Semiconductor Wafer Price Silicon Wafer 100 Price
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1786.

China Supplier Zhendi Manufacturer SCR Thyristor Semiconductor Wafer Price Silicon Wafer 100 Price Open Details in New Window [Jun 25, 2025]

Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b
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1787.

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b
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1788.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
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1789.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b
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1790.

5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V 34mm Half Bridge IGBT Module
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1791.

75A 650V 34mm Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V N-Channel Super Junction Power Mosfet Dhsj25n65f to-220f
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1792.

25A 650V N-Channel Super Junction Power Mosfet Dhsj25n65f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lad
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1793.

40A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lad Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 28 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b
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1794.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30C /DH100P30CE DH100P30CB/DH100P30CD DH100 P30CF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode Murf1040 to-220f-2L
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1795.

10A 400V Fast Recovery Diode Murf1040 to-220f-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100f to-220f
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1796.

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
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1797.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f
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1798.

8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10d to-252b
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1799.

20A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Fast Recovery Diode Mur2020CT to-220c
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1800.

20A 200V Fast Recovery Diode Mur2020CT to-220c Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd