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180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c
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676.

180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b
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677.

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c
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678.

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b
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679.

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b
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680.

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c
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681.

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c
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682.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c
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683.

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b
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684.

5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V P-Channel Enhancement Mode Power Mosfet Dh100p25D to-252b
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685.

25A 100V P-Channel Enhancement Mode Power Mosfet Dh100p25D to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06 to-220c
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686.

180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06 to-220c Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 100V/4.8MΩ /140A N-Mosfet DSG054n10n3 to-220c
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687.

Hot Sale 100V/4.8MΩ /140A N-Mosfet DSG054n10n3 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c
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688.

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c
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689.

12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b
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690.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd