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Product List
676. Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03 Dfn5*6 
[May 16, 2026]
[May 16, 2026] PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
677. Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
678. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
679. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
680. 150A 150V N-Channel Enhancement Mode Power Mosfet DSG059n15na [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
681. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
682. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
683. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
684. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
[Dec 31, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
685. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
686. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
687. 160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
688. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
689. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
690. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
