Jiangsu Profile
Famous Export Brand
Product List
661. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220C 
[Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
662. 180A 40V N-Channel Enhancement Mode Power MOSFET DSG019N04L TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
663. 8A 800V N-Channel Super Junction Power MOSFET DJG660N80E TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
664. 50A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT G50N120D TO-264 [Aug 28, 2026]
[Aug 28, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
665. 170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
666. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...
667. 200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
668. 660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
669. 240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
670. 180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
671. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
672. 355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...
673. 180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
674. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
675. 170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
