Jiangsu Profile
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Product List
661. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 
[Dec 31, 2025]
[Dec 31, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
662. Hot Sale -100V/33MΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b [May 16, 2026]
[May 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
663. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
664. 600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
665. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
666. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
667. Hot Sale 70V/6.3mΩ /100A N-Channel Enhancement Mode Power Mosfet Dh070n07 to-220c [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
668. 80A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70 to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
669. 7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
670. Insulated Gate Bipolar Transistor IGBT G70n65D to-247 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
671. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
672. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
673. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
674. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
[Dec 31, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
675. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
