Jiangsu Profile

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Product List
661. 25A 100V P-Channel Enhancement Mode Power Mosfet Dh100p25D to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
662. 20A 60V P-Channel Enhancement Mode Power Mosfet DHD9z24 to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
663. 12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
664. 120A 80V N-Channel Enhancement Mode Power Mosfet DSG047n08n3 to-220c
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
665. 10A 650V N-Channel Enhancement Mode Power Mosfet F10n65 to-220f
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 0A (T=100ºC) 6.3 A Drain ...
666. 10A 650V N-Channel Enhancement Mode Power Mosfet 12n65D
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 12N65D Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
667. 174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
668. 10.6A 650V N-Channel Super Junction Power Mosfet Djf380n65t to-220f
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
669. 250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04D to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
670. 9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
671. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
672. 80A 40V N-Channel Enhancement Mode Power Mosfet Dh065n04D to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE DH065N04D UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 56 A Drain ...
673. 5A 650V N-Channel Enhancement Mode Power Mosfet 5n65c
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 5N65C Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
674. 100A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85
[Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
675. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08d to-252b
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...



















