Jiangsu Profile
Product List
976. 120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 
[Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
977. 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...
978. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
979. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...
980. 75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...
981. 60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
982. 18A 200V N-Channel Enhancement Mode Power MOSFET F640 TO-220F [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
983. 4A 650V N-Channel Enhancement Mode Power MOSFET F4N65 TO-220F [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
984. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
985. 210A 60V N-Channel Enhancement Mode Power MOSFET DHI027N06 TO-262 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06//DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Drian Voltage VGSS ±25 V Drain ...
986. 12A 100V N-Channel Enhancement Mode Power MOSFET DHD10N10 TO-252 [Jul 20, 2026]
[Jul 20, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 12 A BVGSS ±20 V VTH 1.5 2.6 V EAS - - 16 mJ Ptot - - 28 W Rdson 76 - 95 mΩ ...
987. 60A 60V P-Channel Enhancement Mode Power MOSFET DH150P06F TO-220F [Jul 20, 2026]
[Jul 20, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
988. 150A 100V N-Channel Enhancement Mode Power MOSFET DH150N10 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
989. 60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
990. 70A 100V N-Channel Enhancement Mode Power MOSFET D70N10 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
