Jiangsu Profile
Product List
976. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
977. 740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
978. 23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
979. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D DH100P30F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
980. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
981. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
982. 30A 60V P-Channel Enhancement Mode Power Mosfet Dh300p06D to-252 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH300P06/DH300P06I/DH300P06E/DH300P06B/DH300P06D DH300P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
983. Insulated Gate Bipolar Transistor IGBT G40n60d to-247 **%off [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
984. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Jun 25, 2025]
[Jun 25, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
985. 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n20 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
986. 145A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06p Dfn5*6-8L [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
987. 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
988. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
989. 85A 80V N-Channel Enhancement Mode Power Mosfet Dh075n08d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
990. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
