Jiangsu Profile
Product List
1036. 33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...
1037. 140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
1038. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1039. 150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
1040. 10.6A 700V N-Channel Super Junction Power Mosfet Djd420n70t to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
1041. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1042. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1043. 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1044. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1045. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
1046. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
1047. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
1048. 120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1049. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1050. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
