Jiangsu Profile
Product List
1036. 81A 80V N-Channel Enhancement Mode Power Mosfet Dh060n08 to-220c 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH060N08 /DH060N08B DH060N08D/ DH060N08E DH060N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1037. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1038. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
1039. Dhs130n10d to-252 130A 100V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1040. 7A 650V N-Channel Enhancement Mode Power MOSFET B7N65 TO-251 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1041. D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
1042. Dhs065n85 to-220 100A 85V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 95 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 400 mJ Ptot - - 125 W Rdson 6.5 - 7.8 mΩ ...
1043. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
1044. Insulated Gate Bipolar Transistor IGBT G15n120d to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
1045. 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
1046. 75A 650V 34mm Half Bridge IGBT Module [Jul 16, 2026]
[Jul 16, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
1047. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1048. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...
1049. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1050. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
