Jiangsu Profile
Product List
2221. 116A 68V N-Channel Enhancement Mode Power MOSFET DHE070N06 TO-263 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...
2222. 40A 1200V Fast Recovery Diode MUR40120 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2223. 1200V N-Channel SiC Power MOSFET DCC030M120G2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2224. 40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2225. Silicon Controlled Rectifier Thyristor BT151X TO-220F [Jul 21, 2026]
[Jul 21, 2026] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
2226. 0.8A 600V N-Channel Enhancement Mode Power MOSFET D1N60 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
2227. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2228. 11A 650V N-Channel Super Junction Power MOSFET DHFSJ11N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2229. 15A 400V Fast Recovery Diode MUR1540 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 400 typ 450 IR(uA)25ºC max 20 VF (V) 25ºC typ. 1.2 max 1.4 IF(A) Single chip package 7.5 IF(A) Dual chip package 15 Features High junction temperature ...
2230. 1.0A 5V Positive Voltage Regulator IC 78M05A TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2231. 16A 200V Fast Recovery Diode MUR1620CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2232. 12A 600V N-Channel Enhancement Mode Power MOSFET 12N60 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2233. 1.0A 12V Positive Voltage Regulator IC 78M12A TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2234. 60A 300V Fast Recovery Diode MUR6030DCS TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2235. 100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
