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96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
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2236.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6
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2237.

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6
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2238.

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6
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2239.

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na
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2240.

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6
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2241.

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
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2242.

40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7 Open Details in New Window [Jun 23, 2025]

40A 1200V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6
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2243.

112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6
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2244.

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L
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2245.

176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power Mosfet Dhs010n04u
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2246.

300A 40V N-Channel Enhancement Mode Power Mosfet Dhs010n04u Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 300 (Tc=25ºC) 228 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Positive Voltage Regulators 78L12 Sot-23
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2247.

Positive Voltage Regulators 78L12 Sot-23 Open Details in New Window [Jun 23, 2025]

1 Description The 78LXX series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided, they can ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6
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2248.

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus
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2249.

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package
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2250.

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd