Jiangsu Profile
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Product List
691. 120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
692. 180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
693. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
694. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
695. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
696. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...
697. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
698. 150V/9.5MΩ /52A N-Mosfet Dhs110n15f to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
699. 3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
700. 7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
701. 80A 60V N-Channel Enhancement Mode Power Mosfet E80n06 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
702. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
703. Hot Sale 180A 80V N-Channel Enhancement Mode Power Mosfet Dh029n08 to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
704. 3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
705. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
