Jiangsu Profile
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Product List
691. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C 
[Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
692. 90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
693. 63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
694. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
695. 70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
696. 80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
697. 11A 650V N-Channel Super Junction Power MOSFET DHDSJ11N65 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
698. 7.5A 600V N-Channel Enhancement Mode Power MOSFET 8N60 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
699. 7.5A 600V N-Channel Enhancement Mode Power MOSFET F8N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
700. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
701. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
702. 120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
703. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
704. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
705. 83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...
