Jiangsu Profile
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706. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 to-220c 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS02 2N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
707. 120A 80V N-Channel Enhancement Mode Power Mosfet DSG047n08n3 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
708. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100f to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
709. 4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
710. 600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
711. 2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
712. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
713. 85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
714. 112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
715. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
716. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
717. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
718. 155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
719. 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
720. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
