Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Transistor

» Jiangsu Product List

Product List

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220
Contact Now

706.

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263
Contact Now

707.

11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251
Contact Now

708.

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet
Contact Now

709.

Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet
Contact Now

710.

B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263
Contact Now

711.

70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f
Contact Now

712.

3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263
Contact Now

713.

160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f
Contact Now

714.

2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/ E2N60/B2N60/D2N6 F2N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet DHD50n06 to-252
Contact Now

715.

50A 60V N-Channel Enhancement Mode Power Mosfet DHD50n06 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet DHD150n03 to-252
Contact Now

716.

50A 40V N-Channel Enhancement Mode Power Mosfet DHD150n03 to-252 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Super Junction Power Mosfet Dhdsj7n65 to-252
Contact Now

717.

7A 650V N-Channel Super Junction Power Mosfet Dhdsj7n65 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252
Contact Now

718.

2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT SJ2N50/ISJ2N50/ ESJ2N50/BSJ2N50/DSJ2N50 FSJ2N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dhfsj15n65 to-220f 15A 650V N-Channel Super Junction Power Mosfet
Contact Now

719.

Dhfsj15n65 to-220f 15A 650V N-Channel Super Junction Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263
Contact Now

720.

180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd