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600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252
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706.

600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power Mosfet ED70n10 to-263
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707.

70A 100V N-Channel Enhancement Mode Power Mosfet ED70n10 to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262
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708.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252
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709.

12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220
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710.

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263
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711.

11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251
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712.

4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet
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713.

Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet
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714.

B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263
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715.

70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f
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716.

3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263
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717.

160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f
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718.

2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/ E2N60/B2N60/D2N6 F2N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet DHD50n06 to-252
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719.

50A 60V N-Channel Enhancement Mode Power Mosfet DHD50n06 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet DHD150n03 to-252
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720.

50A 40V N-Channel Enhancement Mode Power Mosfet DHD150n03 to-252 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd