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13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn
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961.

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263
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962.

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c
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963.

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn
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964.

23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f
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965.

7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet 5n50 to-220c
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966.

5A 500V N-Channel Enhancement Mode Power Mosfet 5n50 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p
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967.

20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 14A 650V N-Channel Enhancement Mode Power Mosfet F14n65 to-220f
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968.

Hot Sale 14A 650V N-Channel Enhancement Mode Power Mosfet F14n65 to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 14 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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969.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263
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970.

110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f
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971.

13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263
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972.

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263
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973.

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263
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974.

180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263
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975.

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd