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300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na
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1846.

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6
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1847.

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7
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1848.

40A 1200V N-Channel Sic Power Mosfet Dcev075m120g2c to-263-7 Open Details in New Window [Jun 23, 2025]

40A 1200V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6
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1849.

112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6
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1850.

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L
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1851.

176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power Mosfet Dhs010n04u
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1852.

300A 40V N-Channel Enhancement Mode Power Mosfet Dhs010n04u Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 300 (Tc=25ºC) 228 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Positive Voltage Regulators 78L12 Sot-23
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1853.

Positive Voltage Regulators 78L12 Sot-23 Open Details in New Window [Jun 23, 2025]

1 Description The 78LXX series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided, they can ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6
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1854.

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus
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1855.

75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package
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1856.

300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6
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1857.

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
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1858.

160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p
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1859.

117A 70V N-Channel Enhancement Mode Power Mosfet Dhs043n07p Open Details in New Window [Jun 23, 2025]

Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Synchronous rectification in SMPS Hard ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7
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1860.

55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7 Open Details in New Window [Jun 23, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd