Jiangsu Profile
Product List
1816. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c 
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1817. 650V 30mΩ N-Channel Sic Power Mosfet to-247-3L [Nov 08, 2025]
[Nov 08, 2025] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1818. 200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1819. 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
1820. Ceramic Parts Dome, Top Feed Ipm, 300mm Hdpcvd Ultima X//0200-05590 [Mar 23, 2026]
[Mar 23, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1821. Ceramic Hdpcvd Ultima X//0200-05590 Dome, Top Feed Ipm, 300mm [Mar 23, 2026]
[Mar 23, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1822. Amat Endura2 Al Cover Ring, Ceramic Chamberc2 Al//0200-06864 [Mar 31, 2026]
[Mar 31, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1823. 4/6/8/12 Inch Silicon Wafer for Mosfet Chips [Jan 03, 2026]
[Jan 03, 2026] Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...
Company: Wuxi Kingful Corporation., Ltd
1824. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
1825. IC Dh7107gp 3¹ /2 Digit a/D Converters [Nov 08, 2025]
[Nov 08, 2025] The DH7107 are high performance, low power, 31/2 digit A/D converters. Included are seven segment decoders, display drivers, a reference, and a clock. The DH7107 will directly drive an instrument size light emitting ...
1826. 100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...
1827. 30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L [Nov 08, 2025]
[Nov 08, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
1828. Thyristor Silicon Controlled Rectifier Series W2p4m to-252b [Jun 25, 2025]
[Jun 25, 2025] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
1829. 5A 1700V N-Channel Sic Power Mosfet Dcc1K0m170g1 to-247 [Jun 23, 2025]
[Jun 23, 2025] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1830. 80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
