Jiangsu Profile
Product List
1831. 1700V 34mm IGBT Module Dga75h170m2t 
[Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1832. 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247 [Jun 23, 2025]
[Jun 23, 2025] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1833. Miniature Industrial SSR Control Power Relays Multi-Phase for DC AC Electrical Purpose [May 07, 2025]
[May 07, 2025] Product Description Solid State Relay High-Power Reliability: Experience the pinnacle of cutting-edge engineering with this miniature SSR solid state relay, meticulously designed to provide unmatched reliability. Its ...
1834. High Quality High Current Capacity SCR Mtc30-160 Thyristor Power Module [Apr 18, 2025]
[Apr 18, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1835. Amat Endura2 Pre-Clean Xt/Xte Semiconductor Ceramic Parts Bell Jar //0040-55456 [Mar 23, 2026]
[Mar 23, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1836. Semiconductor Equipment Accessories Cover Ring, Ceramic//0200-06864 [Mar 31, 2026]
[Mar 31, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1837. 650V Trench and Super Junction IGBT Module [Mar 24, 2026]
[Mar 24, 2026] The SJ-IGBT series provides low switching losses, high energy efficiency and high avalanche ruggedness for motor control, solar application and welding machine, etc. Features : High breakdown voltage to 650V ...
Company: Nova Import & Export Trade Co., Ltd
1838. 1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel ... [Jan 07, 2026]
[Jan 07, 2026] 1.2mm 1.5mm Thickness Intrinsic Semiconductor Dura420 SUS420J2 Water Ring with Stainless Steel Materials Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
1839. 8 Inch HRC45-55 Harden Semiconductor Water Ring Box Cassette for Wafer Paste Blue Film or Fixed ... [Jan 07, 2026]
[Jan 07, 2026] 8 inch HRC45-55 Harden semiconductor Water Ring Box Cassette for Wafer Paste Blue Film or Fixed Crystal Circle Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
1840. Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1841. 40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
1842. 100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1843. 40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1844. 100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1845. 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
