Jiangsu Profile
Product List
1861. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1862. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
1863. 210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
1864. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1865. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...
1866. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1867. 10A 600V Fast Recovery Diode Murf10fu60 to-220f-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1868. 11.6A 700V N-Channel Super Junction Power Mosfet Dhsj12n70 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ12N70/DHESJ12N70/DHBSJ12N70/DHDSJ12N70 DHFSJ12 N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1869. 20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1870. 50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...
1871. 5A 800V N-Channel Enhancement Mode Power Mosfet F5n80 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...
1872. 60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
1873. 20A 60V Low Vf Schottky Barrier Diode Hmbr20r60 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1874. 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
1875. 60A 650V Sic Schottky Barrier Diode Dcc60d65g3 to-247 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
