Jiangsu Profile
Product List
2191. 60A 650V Fast Recovery Diode Mur6065 to-247-2L 
[Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2192. 5A 1700V N-Channel Sic Power Mosfet Dccf1K0m170g1 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2193. Hot Sale 80A 300V Fast Recovery Diode Mur80g30nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2194. 16A 400V Fast Recovery Diode Murf1640CT to-220f [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2195. 1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p [Jun 23, 2025]
[Jun 23, 2025] 36A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2196. 115A 1200V N-Channel Sic Power Mosfet Dhc2m016120q to-247-4 [Jun 23, 2025]
[Jun 23, 2025] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2197. Semiconductor Hall IC Ah3134 Unipolar Magnetic Sensor Hall Switch [Mar 18, 2025]
[Mar 18, 2025] Features High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power supply protection Non-contact ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2198. 150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...
2199. 100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...
2200. 30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Nov 08, 2025]
[Nov 08, 2025] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2201. 40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
2202. 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
2203. 200V/11mΩ /110A N-Mosfet Dse108n20na to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
2204. 500V/4A Half-Bridge Ipm Dpqb04hb50mfn Esop-9 [Aug 13, 2025]
[Aug 13, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 4A Power Dissipation (TC = 25℃,Each MOSFET) 32.9 W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
2205. 500V/3A Half-Bridge Ipm Dpqb03hb50mfn Esop-9 Without Internal Integrated Temperature Detection ... [Aug 12, 2025]
[Aug 12, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
