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12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b
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766.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247
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767.

31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b
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768.

9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V P-Channel Enhancement Mode Power Mosfet DHD9z24 to-252b
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769.

20A 60V P-Channel Enhancement Mode Power Mosfet DHD9z24 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f
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770.

6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 6 A (T=100ºC) 3.7 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9MΩ /100A N-Mosfet DSG070n10L3 to-220c
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771.

100V/5.9MΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5MΩ /82A N-Mosfet Dsd065n04la to-252b
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772.

40V/5.5MΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b
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773.

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252
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774.

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12MΩ /60A N-Mosfet Dsb150n10L3 to-251b
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775.

100V/12MΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c
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776.

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c
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777.

180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b
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778.

10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c
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779.

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b
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780.

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd