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10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220
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2146.

10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 80V N-Channel Enhancement Mode Power MOSFET DH050N85 TO-220
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2147.

130A 80V N-Channel Enhancement Mode Power MOSFET DH050N85 TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBR30R100CT TO-220
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2148.

30A 100V Schottky Barrier Diode MBR30R100CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12 TO-220C
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2149.

50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247
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2150.

20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 650V SiC Schottky Barrier Diode DCGT08D65G4 TO-220
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2151.

8A 650V SiC Schottky Barrier Diode DCGT08D65G4 TO-220 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C
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2152.

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B
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2153.

6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252
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2154.

60A 20V N-Channel Enhancement Mode Power MOSFET DH048N02D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 80V Schottky Barrier Diode MBR20R80CT TO-220
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2155.

20A 80V Schottky Barrier Diode MBR20R80CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 800V Fast Recovery Diode MURF1080 TO-220F
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2156.

10A 800V Fast Recovery Diode MURF1080 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V N-Channel Enhancement Mode Power MOSFET D4N65 TO-252
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2157.

4A 650V N-Channel Enhancement Mode Power MOSFET D4N65 TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 55V P-Channel Enhancement Mode Power MOSFET DH3205P TO-220C
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2158.

110A 55V P-Channel Enhancement Mode Power MOSFET DH3205P TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 110 A BVGSS ±20 V VTH 2 4 V EAS - - 1440 mJ Ptot - - 200 W Rdson 6.8 - 8.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 85V N-Channel Enhancement Mode Power MOSFET DHS065N85 TO-220
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2159.

100A 85V N-Channel Enhancement Mode Power MOSFET DHS065N85 TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 95 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 400 mJ Ptot - - 125 W Rdson 6.5 - 7.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode MBR3045CT TO-263
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2160.

30A 45V Schottky Barrier Diode MBR3045CT TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd