Jiangsu Profile
Product List
2131. 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b 
[Jun 24, 2024]
[Jun 24, 2024] 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS ...
2132. Dh045n06p Dfn5X6 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH045N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 115 A (T=100ºC) 80 A Drain ...
2133. 40V/4.5mΩ /40A N-Mosfet Dsr070n04la [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
2134. SMD Fast Recovery Rectifier Diode 4A 200V Mur420 [Jan 11, 2025]
[Jan 11, 2025] Maybe You want to ask these questions~ 1, Are you Manufacturer or trading company? We are a manufacturer in diode, bridge rectifiers and automotive rectifier diode. We have 3 factories for different kinds ...
2135. 180A 100V N-Channel Enhancement Mode Power Mosfet DSG040n10n3a to-220c [Jul 25, 2024]
[Jul 25, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
2136. 6V-36V Infrared G30 Photoelectric Sensor Switch Detection Distance Normal 20-1000cm [Apr 28, 2025]
[Apr 28, 2025] 
Stord photoelectric sensors G30 series is a high-performance sensor products, diffuse type's detection distance is 20-100cm, retroreflictive's detection distance is 3m, trough beam's detection distance is 10m, can meet ...
2137. Wtsensor OEM 0.25%Fs Dp Piezoresistive Silicon Differential Pressure Sensor Transmitter [Mar 11, 2025]
[Mar 11, 2025]
Product Description Features: Piezoresistive silicon chip employed Perfect long term stability MEMS Technology Sensor diameter: 19mm Products Overviews: PC10D(WTD19) differential pressure sensor is a standard ...
Company: Nanjing Wotian Technology Co., Ltd.
2138. Uts630-1250A Inverter Converter Three Phase Full Control Bridge Customizable Dual Single & AC/DC ... [May 08, 2025]
[May 08, 2025] Product Description Product name UTS630-1250A Three Phase Full Control Bridge Welding Diode Assembly Color Silver Usage Welding machine Service 24 hours service Don't hesitate to click here and share your ...
2139. Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03b17 [Jul 27, 2024]
[Jul 27, 2024] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
2140. Hot Sale 105A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04p Dfn5*6-8 [Jul 26, 2024]
[Jul 26, 2024] PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...
2141. 135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
2142. 85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
2143. 100A 1700V Half Bridge Module Dga100h170m2t 34mm [Jun 24, 2024]
[Jun 24, 2024] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2144. 1A1, 1A2, 1A3, 1A4, 1A5, 1A6, 1A7, General Purpose Rectifiers [Mar 02, 2020]
[Mar 02, 2020] Product Description Symbols 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
2145. 4-20mA voltage output 80mm height min size Piezoresistive pressure sensor Hirschmann connector ... [Jun 06, 2025]
[Jun 06, 2025]
HPM130 Compact Pressure Transmitter adopts advanced technology ,ingenious structure design, with miniaturized imported transmitter and precise digital signal. It can be used in narrow confines to meet the need of ...
