Jiangsu Profile
Product List
2131. 220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07D TO-252B 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2132. 20A 60V P-Channel Enhancement Mode Power MOSFET DH500P06D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2133. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2134. 60A 60V N-Channel Enhancement Mode Power MOSFET DH132N06D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 35 A Drain ...
2135. 5A 500V N-Channel Enhancement Mode Power MOSFET B5N50 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2136. 18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
2137. 20A 400V Fast Recovery Diode MUR2040 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2138. 174A 85V N-Channel Enhancement Mode Power MOSFET DHS030N88 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2139. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10B TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2140. 9A 650V N-Channel Enhancement Mode Power MOSFET D9N65 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
2141. 18A 650V N-Channel Enhancement Mode Power MOSFET F18N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F18N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 0A (T=100ºC) 11 A Drain ...
2142. 100A 100V N-Channel Enhancement Mode Power MOSFET DSG070N10L3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
2143. 7A 650V N-Channel Enhancement Mode Power MOSFET DHD7N65 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
2144. 180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
2145. 52A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15F TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
