Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

80A 650V Trench FS IGBT DGC80F65M TO-247
Contact Now

2116.

80A 650V Trench FS IGBT DGC80F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 600V Fast Recovery Diode MURF1660CT TO-220F
Contact Now

2117.

16A 600V Fast Recovery Diode MURF1660CT TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B
Contact Now

2118.

68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode MUR80FU20NCA TO-247
Contact Now

2119.

80A 200V Fast Recovery Diode MUR80FU20NCA TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 1200V Fast Recovery Diode MUR60120 TO-247
Contact Now

2120.

60A 1200V Fast Recovery Diode MUR60120 TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263
Contact Now

2121.

180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6
Contact Now

2122.

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247
Contact Now

2123.

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Fast Recovery Diode D92-02A TO-3PN
Contact Now

2124.

10A 200V Fast Recovery Diode D92-02A TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power MOSFET DTG032N04N TO-220C
Contact Now

2125.

120A 40V N-Channel Enhancement Mode Power MOSFET DTG032N04N TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6
Contact Now

2126.

96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252
Contact Now

2127.

130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247
Contact Now

2128.

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15 TO-220
Contact Now

2129.

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15 TO-220 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power MOSFET DTG045N04NA TO-220C
Contact Now

2130.

120A 40V N-Channel Enhancement Mode Power MOSFET DTG045N04NA TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd