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150A 90V N-Channel Enhancement Mode Power MOSFET DH90N040R TO-220
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2116.

150A 90V N-Channel Enhancement Mode Power MOSFET DH90N040R TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247
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2117.

30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C
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2118.

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 800V N-Channel Super Junction Power MOSFET DHDSJ7N80 TO-252
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2119.

7A 800V N-Channel Super Junction Power MOSFET DHDSJ7N80 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ7N80/DHISJ7N80/DHESJ7N80/DHBSJ7N80/DHDSJ7N80 DHFSJ7N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5
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2120.

145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C
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2121.

100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

49A 80V N-Channel Enhancement Mode Power MOSFET DH116N08D TO-252B
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2122.

49A 80V N-Channel Enhancement Mode Power MOSFET DH116N08D TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MURF1040 TO-220F
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2123.

10A 400V Fast Recovery Diode MURF1040 TO-220F Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V N-Channel SiC Power MOSFET DCCF060M65G2 TO-247
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2124.

30A 650V N-Channel SiC Power MOSFET DCCF060M65G2 TO-247 Open Details in New Window [Jul 21, 2026]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07 TO-220C
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2125.

220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.6A 650V N-Channel Super Junction Power MOSFET DHFSJ8N65 TO-220F
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2126.

7.6A 650V N-Channel Super Junction Power MOSFET DHFSJ8N65 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06 TO-220C
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2127.

145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03D TO-252B
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2128.

320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03D TO-252B Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 900V N-Channel Enhancement Mode Power MOSFET 9N90B TO-247
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2129.

9A 900V N-Channel Enhancement Mode Power MOSFET 9N90B TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 40V N-Channel Enhancement Mode Power MOSFET DTG025N04NA TO-220C
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2130.

220A 40V N-Channel Enhancement Mode Power MOSFET DTG025N04NA TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd