Jiangsu Profile
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Product List
781. 20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
782. 70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
783. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
784. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
785. 5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
786. 25A 100V P-Channel Enhancement Mode Power Mosfet Dh100p25D to-252b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
787. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06 to-220c [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
788. Hot Sale 100V/4.8MΩ /140A N-Mosfet DSG054n10n3 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
789. 174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
790. 12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
791. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
792. 120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
793. 180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
794. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
795. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
