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Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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781.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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782.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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783.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b
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784.

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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785.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

High Voltage Mosfet Dje660n80e to-263
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786.

High Voltage Mosfet Dje660n80e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b
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787.

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
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788.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251
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789.

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263
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790.

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6
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791.

35V/0.58mΩ /355A N-Mosfet DSP007n03la Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.8mΩ /272A N-Mosfet Dsu024n10n3a Toll Package
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792.

100V/1.8mΩ /272A N-Mosfet Dsu024n10n3a Toll Package Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.15mΩ /373A N-Mosfet Dsu014n10n3a Toll Package
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793.

100V/1.15mΩ /373A N-Mosfet Dsu014n10n3a Toll Package Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80V/3.4mΩ /100A N-Mosfet DSP037n08n3 Dfn5X6
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794.

80V/3.4mΩ /100A N-Mosfet DSP037n08n3 Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65
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795.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd