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Hot Sale 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f
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811.

Hot Sale 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252
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812.

Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252
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813.

Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b
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814.

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220
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815.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 Open Details in New Window [May 29, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
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816.

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
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817.

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D Open Details in New Window [Sep 02, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252
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818.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8
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819.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220
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820.

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252
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821.

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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822.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f
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823.

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f Open Details in New Window [Apr 01, 2026]

PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn
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824.

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn Open Details in New Window [Mar 02, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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825.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd