Jiangsu Profile
Product List
796. Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 
[May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
797. Hot Sale 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06 to-220 [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
798. D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet [May 17, 2025]
[May 17, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...
799. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
800. 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
801. 50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
802. 105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
803. 5A 500V N-Channel Enhancement Mode Power Mosfet D830 to-252 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 830/D830 F830 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 5 A Total ...
804. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [May 17, 2025]
[May 17, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
805. 23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
806. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
807. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
808. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
809. 2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/ E2N60/B2N60/D2N6 F2N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
810. F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
