Jiangsu Profile
Product List
871. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 
[Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
872. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
873. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
874. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
875. DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
876. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
877. 2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
878. 80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
879. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
880. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
881. F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
882. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
883. 80A 60V N-Channel Enhancement Mode Power Mosfet E80n06 to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
884. Dh020n03, to-220, 200A 30V N-Channel Enhancement Mode Power Mosfet [Jun 25, 2025]
[Jun 25, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
885. 4A 800V N-Channel Enhancement Mode Power Mosfet F4n80 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 4N80/I4N80/E4N80 F4N80 Drian-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...
