Jiangsu Profile
Product List
871. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 
[Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
872. Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
873. Hot Sale Insulated Gate Bipolar Transistor Dhg20t65D IGBT to-220f [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
874. Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
875. 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
876. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [Oct 17, 2025]
[Oct 17, 2025] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
877. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
878. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
879. 160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
880. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Sep 02, 2025]
[Sep 02, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
881. Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
882. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
883. 54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...
884. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
885. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
