Jiangsu Profile
Product List
931. 50A 60V N-Channel Enhancement Mode Power MOSFET DHD50N06 TO-252 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHD50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
932. 20A 500V N-Channel Enhancement Mode Power MOSFET F20N50 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
933. 85A 30V P-Channel Enhancement Mode Power MOSFET DHD85P03 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
934. 20A 500V N-Channel Enhancement Mode Power MOSFET 20N50B TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
935. 160A 90V N-Channel Enhancement Mode Power MOSFET DHE90N035R TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
936. 4A 600V N-Channel Enhancement Mode Power MOSFET B4N60 TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
937. 70A 100V N-Channel Enhancement Mode Power MOSFET ED70N10 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
938. 20A 600V N-Channel Enhancement Mode Power MOSFET F20N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
939. 30A 60V N-Channel Enhancement Mode Power MOSFET DHD30N06 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
940. 35A 100V P-Channel Enhancement Mode Power MOSFET DH100P30D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
941. 8A 700V N-Channel Enhancement Mode Power MOSFET DHF8N70 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 8N70/I8N70/E8N70 DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain ...
942. 7A 650V N-Channel Super Junction Power MOSFET DHDSJ7N65 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
943. 10A 650V N-Channel Enhancement Mode Power MOSFET DHI10N65 TO-262 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
944. 80A 100V N-Channel Enhancement Mode Power MOSFET DHS084N10D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
945. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
