Jiangsu Profile
Product List
931. 80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07 TO-220 
[Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
932. 88A 60V N-Channel Enhancement Mode Power MOSFET DH070N06 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
933. 50A 150V N-Channel Enhancement Mode Power MOSFET DH50N15 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
934. 120A 100V N-Channel Enhancement Mode Power MOSFET DH10H037R TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
935. 120A 60V N-Channel Enhancement Mode Power MOSFET D3205 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT D3205/ID3205/ED3205 FD3205 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
936. 80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
937. 2A 650V N-Channel Enhancement Mode Power MOSFET D2N65 TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
938. 0.8A 600V N-Channel Enhancement Mode Power MOSFET D1N60 TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
939. 20A 500V N-Channel Enhancement Mode Power MOSFET 20N50B TO-247 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
940. 12A 600V N-Channel Enhancement Mode Power MOSFET 12N60 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
941. 100V/2.2MΩ /180A N-Mosfet Dse026n10n3a to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...
942. 100V/5.6MΩ /103A N-Mosfet Dse065n10L3a to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
943. 250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
944. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
945. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
