Jiangsu Profile
Product List
946. 16A 600V N-Channel Enhancement Mode Power MOSFET F16N60 TO-220F 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...
947. 60A 650V Insulated Gate Bipolar Transistor IGBT G60T65D TO-3P [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
948. 200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
949. 110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
950. 130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
951. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
952. 120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
953. 70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
954. 81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5*6 [Aug 10, 2026]
[Aug 10, 2026] PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
955. 175A 80V N-Channel Enhancement Mode Power MOSFET DHS035N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
956. 120A 90V N-Channel Enhancement Mode Power MOSFET DHE90N045R TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
957. 200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...
958. 205A 85V N-Channel Enhancement Mode Power MOSFET DHS025N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
959. 140A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
960. 160A 120V N-Channel Enhancement Mode Power MOSFET DHS044N12E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
