Jiangsu Profile
Product List
946. 16A 650V N-Channel Enhancement Mode Power MOSFET F16N65 TO-220F 
[Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...
947. 4.8A 650V N-Channel Super Junction Power MOSFET DHDSJ5N65 TO-252 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
948. 140A 150V N-Channel Enhancement Mode Power MOSFET DSG070N15NA TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
949. 120A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04B TO-251 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
950. 215A 85V N-Channel Enhancement Mode Power MOSFET DH025N08 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
951. 150A 30V N-Channel Enhancement Mode Power MOSFET DTG023N03L TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
952. 18A 200V N-Channel Enhancement Mode Power MOSFET 18N20 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
953. 36A 120V N-Channel Enhancement Mode Power MOSFET DSG270N12N3 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
954. 70A 120V N-Channel Enhancement Mode Power MOSFET DSG140N12N3 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
955. 100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
956. 180A 135V N-Channel Enhancement Mode Power MOSFET DSG045N14N TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
957. 13A 650V N-Channel Super Junction Power MOSFET DHSJ13N65 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
958. 70A 650V N-Channel Super Junction Power MOSFET DJC070N65M2 TO-247 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
959. 150A 90V N-Channel Enhancement Mode Power MOSFET DH90N040R TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...
960. 20A 900V N-Channel Enhancement Mode Power MOSFET 20N90D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
