Jiangsu Profile
Product List
916. 15A 60V N-Channel Enhancement Mode Power MOSFET DHZ24 TO-220 
[Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHZ24/DHIZ24/DHEZ24/DHBZ24/DHDZ24 DHFZ24 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
917. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
918. 105A 85V N-Channel Enhancement Mode Power MOSFET DHS056N85 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
919. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
920. 200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 [Jul 20, 2026]
[Jul 20, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
921. 250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
922. 81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
923. 40A 30V N-Channel Enhancement Mode Power MOSFET DHD80N03 TO-252B [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
924. 70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
925. 100A 68V N-Channel Enhancement Mode Power MOSFET DH3205A TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
926. 60A 60V P-Channel Enhancement Mode Power MOSFET DH150P06D TO-252 [Jul 20, 2026]
[Jul 20, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 110 W Rdson 14 - 720 mΩ ...
927. 80A 100V P-Channel Enhancement Mode Power MOSFET DH100P70 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
928. 18A 100V P-Channel Enhancement Mode Power MOSFET DH100P18D TO-252 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
929. 160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
930. 80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
