Jiangsu Profile
Product List
856. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
857. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
858. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
859. Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
860. Dhfsj15n65 to-220f 15A 650V N-Channel Super Junction Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
861. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
862. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
863. Dh90n040r to-220 150A 90V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...
864. 25A 30V N-Channel Enhancement Mode Power Mosfet DHD20n03 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHB20N03/DHD20N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 16 A Drain ...
865. Dh3205t to-220c 120A 55V Mosfets N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...
866. 2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT SJ2N50/ISJ2N50/ ESJ2N50/BSJ2N50/DSJ2N50 FSJ2N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
867. 18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
868. 50A 60V N-Channel Enhancement Mode Power Mosfet DHD50n06 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHD50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
869. 3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
870. 80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
