Jiangsu Profile
Product List
856. MOSFET IXFN38N100Q2 
[Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
857. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
858. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
859. Insulated Gate Bipolar Transistor IGBT G30n120d to-247 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
860. 25A 100V N-Channel Enhancement Mode Power Mosfet 25n10 to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
861. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
862. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
863. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
864. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
865. 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
866. Insulated Gate Bipolar Transistor IGBT G15n120d to-247 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
867. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
868. Insulated Gate Bipolar Transistor IGBT G70n65D to-247 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
869. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Sep 01, 2025]
[Sep 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
870. 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
