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25A 120V Insulated Gate Bipolar Transistor IGBT G25T120D TO-247
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1891.

25A 120V Insulated Gate Bipolar Transistor IGBT G25T120D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 50 A Collector Current (Tc=100ºC) 25 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 800V N-Channel Enhancement Mode Power MOSFET F10N80 TO-220F
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1892.

10A 800V N-Channel Enhancement Mode Power MOSFET F10N80 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 500V N-Channel Enhancement Mode Power MOSFET F13N50 TO-220F
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1893.

13A 500V N-Channel Enhancement Mode Power MOSFET F13N50 TO-220F Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Schottky Barrier Diode MBR20R150CT TO-220
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1894.

20A 150V Schottky Barrier Diode MBR20R150CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V Schottky Barrier Diode MBR1060CT TO-220
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1895.

10A 60V Schottky Barrier Diode MBR1060CT TO-220 Open Details in New Window [Jul 21, 2026]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 1200V Fast Recovery Diode MUR8120 TO-220
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1896.

8A 1200V Fast Recovery Diode MUR8120 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

37A 650V N-Channel SiC Power MOSFET S37N65D TO-247
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1897.

37A 650V N-Channel SiC Power MOSFET S37N65D TO-247 Open Details in New Window [Jul 21, 2026]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 55V N-Channel Enhancement Mode Power MOSFET DH3205T TO-220C
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1898.

120A 55V N-Channel Enhancement Mode Power MOSFET DH3205T TO-220C Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 68V N-Channel Enhancement Mode Power MOSFET DH065N07 TO-220
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1899.

85A 68V N-Channel Enhancement Mode Power MOSFET DH065N07 TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Enhancement Mode Power MOSFET 7N65 TO-220
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1900.

7A 650V N-Channel Enhancement Mode Power MOSFET 7N65 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

256A 30V N-Channel Enhancement Mode Power MOSFET DH012N03P DFN5
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1901.

256A 30V N-Channel Enhancement Mode Power MOSFET DH012N03P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH012N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 256 A (T=100ºC) 181 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C
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1902.

63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 1200V N-Channel SiC Power MOSFET DCCF016M120G2 TO-247
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1903.

120A 1200V N-Channel SiC Power MOSFET DCCF016M120G2 TO-247 Open Details in New Window [Jul 21, 2026]

115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 80V N-Channel Enhancement Mode Power MOSFET DH075N08 TO-220C
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1904.

85A 80V N-Channel Enhancement Mode Power MOSFET DH075N08 TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LD TO-252B
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1905.

50A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LD TO-252B Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd