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135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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2086.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur8020CT to-3pn
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2087.

80A 200V Fast Recovery Diode Mur8020CT to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
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2088.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

High Voltage Mosfet Dje660n80e to-263
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2089.

High Voltage Mosfet Dje660n80e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b
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2090.

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
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2091.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251
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2092.

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263
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2093.

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V 50A N-Mosfet Dsb190n10L3
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2094.

100V 50A N-Mosfet Dsb190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottkybarrierdiode Mbr20100CS
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2095.

20A 100V Schottkybarrierdiode Mbr20100CS Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a
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2096.

85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V/3.3mΩ /225A N-Mosfet Dsu035n14n3
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2097.

135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3
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2098.

1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3 Open Details in New Window [Nov 08, 2025]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Isolation Measurement Ultra-Sensitive Bipolar Hall IC Ah3051 Speed Sensing
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2099.

Isolation Measurement Ultra-Sensitive Bipolar Hall IC Ah3051 Speed Sensing Open Details in New Window [Aug 25, 2025]

Product Description Ultra-sensitive bipolar hall-effect switches These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, I. E., anorth-south alternating field, and they are ...

Company: Nanjing AH Electronic Science & Technology Co., Ltd.

80A 1200V Fast Recovery Diode Mur80120
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2100.

80A 1200V Fast Recovery Diode Mur80120 Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd