Jiangsu Profile
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Product List
2086. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10D TO-252B 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2087. 60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
2088. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS015N06 TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
2089. 90A 30V N-Channel Enhancement Mode Power MOSFET DHB90N03 TO-251B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
2090. 205A 85V N-Channel Enhancement Mode Power MOSFET DHS025N88 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
2091. 3A 900V N-Channel Enhancement Mode Power MOSFET DHD3N90 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
2092. 5A 600V N-Channel Enhancement Mode Power MOSFET 5N60 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
2093. 1200V N-Channel SiC Power MOSFET DCCF030M120G2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2094. 110A 30V N-Channel Enhancement Mode Power MOSFET 110N03 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS 30 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
2095. 2A 600V N-Channel Enhancement Mode Power MOSFET B2N60 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
2096. 180A 60V N-Channel Enhancement Mode Power MOSFET 180N06 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 130 A Drain ...
2097. 2A 650V N-Channel Enhancement Mode Power MOSFET B2N65 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
2098. 4A 650V N-Channel Enhancement Mode Power MOSFET B4N65 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2099. 7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2100. 200A 40V N-Channel Enhancement Mode Power MOSFET D1404 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
