Jiangsu Profile
Product List
2086. 120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
2087. 170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
2088. 100V 50A N-Mosfet Dsb190n10L3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2089. 20A 100V Schottkybarrierdiode Mbr20100CS [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...
2090. 85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
2091. 135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
2092. 1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3 [Nov 08, 2025]
[Nov 08, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
2093. Isolation Measurement Ultra-Sensitive Bipolar Hall IC Ah3051 Speed Sensing [Aug 25, 2025]
[Aug 25, 2025] Product Description Ultra-sensitive bipolar hall-effect switches These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, I. E., anorth-south alternating field, and they are ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2094. 80A 1200V Fast Recovery Diode Mur80120 [Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2095. 650V 6A Sic Schottky Barrier Diode SDS065j006s3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2096. Hot Sale 60A 200V Fast Recovery Diode Mur6020nca to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2097. 60A 650V Fast Recovery Diode Mur6065 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2098. 1200V 600A 62mm IGBT Module Dgb600h120L2t [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2099. 5A 1700V N-Channel Sic Power Mosfet Dccf1K0m170g1 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2100. Hot Sale 80A 300V Fast Recovery Diode Mur80g30nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
