Jiangsu Profile
Product List
1906. High Current Capacity Thyristor Mtc1200A SCR Power Module Good Quality Ics 
[Apr 29, 2025]
[Apr 29, 2025] Product Description Thyristor Module High Power Handling Capacity: Engineered for superior high-power applications, this cutting-edge semiconductor module boasts an impressive peak repetitive reverse voltage of 1600V. ...
1907. 100A 40V N-Channel Enhancement Mode Power MOSFET DSP018N04LA DFN5X6 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 100 A Drain ...
1908. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1909. 99A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10P DFN5X6 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 99 A (T=100ºC) 70 A Drain ...
1910. 100A 80V N-Channel Enhancement Mode Power MOSFET DSP037N08N3 DFN5X6 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...
1911. 10A 200V Schottky Barrier Diode MBRE10200CT TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
1912. 20A 400V Fast Recovery Diode MURF2040CT TO-220F [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1913. 100A 1700V Half Bridge IGBT MODULE DGA100H170M2T 34MM [Aug 13, 2026]
[Aug 13, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1914. 80A 300V Fast Recovery Diode MUR80G30NCT TO-3PN [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1915. 81A 30V N-Channel Enhancement Mode Power MOSFET DHP90N03 DFN5*6 [Aug 10, 2026]
[Aug 10, 2026] PARAMETER SYMBOL VALUE UNIT DHP90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
1916. 8A 650V SiC Schottky Barrier Diode DCE08D65G4 TO-263 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1917. 175A 80V N-Channel Enhancement Mode Power MOSFET DHS035N88E TO-263 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
1918. 40A 1200V SiC Schottky Barrier Diode DCCT40D120G4 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1919. 60A 300V Fast Recovery Diode MUR6030NCT TO-3PN [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1920. 120A 90V N-Channel Enhancement Mode Power MOSFET DHE90N045R TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
