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30mΩ 1200V N-Channel Sic Power Mosfet Dccf030m120g2 to-247-4L
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1906.

30mΩ 1200V N-Channel Sic Power Mosfet Dccf030m120g2 to-247-4L Open Details in New Window [Jun 23, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 600A 62mm IGBT Module Dgb600h120L2t
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1907.

1200V 600A 62mm IGBT Module Dgb600h120L2t Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1700V N-Channel Sic Power Mosfet Dccf1K0m170g1 to-247-4L
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1908.

5A 1700V N-Channel Sic Power Mosfet Dccf1K0m170g1 to-247-4L Open Details in New Window [Jun 23, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 80A 300V Fast Recovery Diode Mur80g30nct to-3pn
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1909.

Hot Sale 80A 300V Fast Recovery Diode Mur80g30nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode Murf1640CT to-220f
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1910.

16A 400V Fast Recovery Diode Murf1640CT to-220f Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p
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1911.

1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p Open Details in New Window [Jun 23, 2025]

36A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 1200V N-Channel Sic Power Mosfet Dhc2m016120q to-247-4
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1912.

115A 1200V N-Channel Sic Power Mosfet Dhc2m016120q to-247-4 Open Details in New Window [Jun 23, 2025]

115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V SMD Super Fast Recovery Diode Mur1040
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1913.

10A 400V SMD Super Fast Recovery Diode Mur1040 Open Details in New Window [Oct 26, 2022]

Features Low cost Low leakage Low forward voltage drop High current capability Mechanical Data Case: TO-220AC Molding Compound: UL Flammability Classification Rating 94V-0 ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65
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1914.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dcct20d65g4 to-247-2
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1915.

20A 650V Sic Schottky Barrier Diode Dcct20d65g4 to-247-2 Open Details in New Window [Jun 25, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f
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1916.

Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT F8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 15A 600V Fast Recovery Diode Mur1560 to-220-2L
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1917.

Hot Sale 15A 600V Fast Recovery Diode Mur1560 to-220-2L Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode Murd1060CT to-252
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1918.

10A 600V Fast Recovery Diode Murd1060CT to-252 Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 600V Fast Recovery Diode Mur860 to-220-2L
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1919.

8A 600V Fast Recovery Diode Mur860 to-220-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220
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1920.

2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH85N06/DHI85N06/DHE85N06/DHB85N06/DHD85N06 DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd