Jiangsu Profile
Product List
1921. High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ... 
[Jul 24, 2025]
[Jul 24, 2025] Product Description High-Quality Semiconductor Chips: Experience the cutting-edge innovation of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Engineered for extraordinary ...
1922. Plastic Silicon Fast Recovery Diodes [Nov 08, 2021]
[Nov 08, 2021] Silicon powder coating is a kind of fast recovery diode switch characteristics, semiconductor diode reverse recovery time characteristics, mainly used in switching power supply, electronic circuits, such as the pulse ...
1923. High-Efficiency 3-Phase Power Distribution SCR Automatic Thyristor High Current AC Thyristor Power ... [Jul 24, 2025]
[Jul 24, 2025] Product Description High Voltage Capacity: Our 380V Three Phase Voltage Thyristor SCR Power Regulator Stabilizers are designed to handle high voltage applications, making them ideal for use in industries that require ...
1924. Miniature Industrial Solid State SSR Multi-Phase DC AC Control Power Relays 10A Sealed Protection [Jul 24, 2025]
[Jul 24, 2025] Product Description Solid State Relay High-Power Reliability: Discover the pinnacle of engineering brilliance with our miniature SSR solid state relay. Tailored for exceptional reliability, it boasts a formidable ...
1925. Miniature Industrial Solid State SSR Control Power Relays 5V 5A High Power Switch Protective ... [Jul 24, 2025]
[Jul 24, 2025] Product Description Solid State Relay High-Power Reliability: Introducing the pinnacle of engineering excellence, this compact SSR solid state relay is meticulously crafted to ensure unmatched reliability. Designed ...
1926. Triple Output Three-Phase Four-Wire High Power Industrial 3500A Capacitor Switch for High Current ... [Jul 15, 2025]
[Jul 15, 2025] Product Description High Power Rating: Elevate your power solutions with our superior high-capacity power supply switch, boasting an impressive rating of 1000A. Designed for those demanding applications where ...
1927. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1928. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1929. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1930. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1931. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1932. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1933. 400A 650V Half Bridge Module Dgd400h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1934. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1935. 600A 1700V Half Bridge Module Dgd600h170L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
