Jiangsu Profile

Product List
1921. Hot Sale 15A 600V Fast Recovery Diode Mur1560 to-220-2L
[Jul 31, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1922. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1923. Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...
1924. Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
1925. Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1926. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65
[Jul 27, 2024]

PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...
1927. Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f
[Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT F8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1928. 8A 600V Fast Recovery Diode Mur860 to-220-2L
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1929. 2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH85N06/DHI85N06/DHE85N06/DHB85N06/DHD85N06 DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1930. 20A 650V Sic Schottky Barrier Diode Dcct20d65g4 to-247-2
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1931. 25A 650V Sic Schottky Barrier Diode Dcet20d65g3 to-263-2
[Jun 24, 2024]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1932. 180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...
1933. 10A 600V Fast Recovery Diode Murf1060 to-220f-2L
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1934. 40mΩ 650V N-Channel Sic Power Mosfet Dccf040m65g2 to-247-4L
[Jun 24, 2024]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1935. 40A 1200V Sic Schottky Barrier Diode Dcct40d120g4 to-247-2
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
