Jiangsu Profile
Product List
1996. 160A 90V N-Channel Enhancement Mode Power MOSFET DH90N035R TO-220 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1997. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1998. 5A 500V N-Channel Enhancement Mode Power MOSFET 5N50 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1999. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2000. 1.0A 12V Positive Voltage Regulator IC 78M12A TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2001. 23A 500V N-Channel Enhancement Mode Power MOSFET 23N50D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2002. 7A 800V N-Channel Enhancement Mode Power MOSFET F7N80 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2003. 150A 100V N-Channel Enhancement Mode Power MOSFET DH150N10 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2004. Silicon Controlled Rectifier Thyristor BT151X TO-220F [Aug 09, 2026]
[Aug 09, 2026] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
2005. 5V Three-Terminal Negative Voltage Regulator IC L7905CV TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
2006. 80A 100V P-Channel Enhancement Mode Power MOSFET DH100P70 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2007. 100A 68V N-Channel Enhancement Mode Power MOSFET DH3205A TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2008. 18A 100V P-Channel Enhancement Mode Power MOSFET DH100P18D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
2009. 10A 650V N-Channel Enhancement Mode Power MOSFET 10N65 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low switching loss Low ON Resistance (Rdson≤5.5mΩ) Low Gate Charge (Typ: 48nC) Low Reverse Transfer Capacitances (Typ: 210pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
2010. 120A 60V N-Channel Enhancement Mode Power MOSFET D3205 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT D3205/ID3205/ED3205 FD3205 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
