Jiangsu Profile
Product List
2071. 300A 1200V Half Bridge Module Dgd300h120L2t 
[Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2072. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2073. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2074. 400A 650V Half Bridge Module Dgd400h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2075. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2076. 600A 1700V Half Bridge Module Dgd600h170L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2077. Miniature Industrial Solid State SSR Control Power Relays Multi-Phase DC AC High Power Relays [Jul 24, 2025]
[Jul 24, 2025] Product Description Solid State Relay: Embrace the future of electrical control with our cutting-edge solid state relay, designed specifically to meet the demands of high-power devices with unmatched efficiency and ...
2078. Miniature Industrial Solid State SSR Control Power Relays Multi-Phase DC AC High Power 30A Contact ... [Jul 24, 2025]
[Jul 24, 2025] Product Description Solid State Relay High-Power Reliability: Discover the pinnacle of cutting-edge engineering with our miniature SSR solid state relay. Expertly crafted, it offers exceptional reliability with a ...
2079. High Power Solid State Relay 100A 200A 300A 3 Phase 5V 12V 24V Solid State Relay [Jul 24, 2025]
[Jul 24, 2025] Product Description Solid State Relay High-Power Reliability: Experience the pinnacle of advanced engineering with this miniature SSR solid state relay, meticulously designed to offer unmatched reliability. Boasting a ...
2080. New Arrival Energy Saving Triac Semiconductor Chip Rectifier Power SCR Thyristor for Refrigeration ... [Jul 24, 2025]
[Jul 24, 2025] Product Description High-Quality Semiconductor Chips: Zhenjiang Zhendi Electric Technology Co., Ltd proudly presents its Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. These chips ...
2081. High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ... [Jul 24, 2025]
[Jul 24, 2025] Product Description High-Quality Semiconductor Chips: Experience the cutting-edge innovation of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Engineered for extraordinary ...
2082. 135V/3.3mΩ /225A N-Mosfet Dsu035n14n3 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
2083. 100A 1700V Half Bridge Module Dga100h170m2t 34mm [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2084. 1700V/80mΩ /37A N-Channel Sic Mosfet Dcc080m170g2 to-247-3 [Jun 23, 2025]
[Jun 23, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
2085. 85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
