Jiangsu Profile
Product List
2071. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2072. Mx341b AVR Generator Voltage Regulator [Oct 20, 2025]
[Oct 20, 2025] Product Introduction Instructions for using voltage regulator: In summary, Lingyu aims to provide you with professional generator spare parts. The quality of our spare parts is very reliable because we use original and ...
Company: Jiangsu Lingyu Generator Co., Ltd.
2073. 500V/4A Half-Bridge Ipm Dpqb04hb50mfn Esop-9 [Aug 13, 2025]
[Aug 13, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 4A Power Dissipation (TC = 25℃,Each MOSFET) 32.9 W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
2074. 500V/3A Half-Bridge Ipm Dpqb03hb50mfn Esop-9 Without Internal Integrated Temperature Detection ... [Aug 12, 2025]
[Aug 12, 2025] Specification Drain-Source Voltage 500V Continuous Drain Current TC = 25℃(Silicon limit) 3A Power Dissipation (TC = 25℃,Each MOSFET) 24.5W Operating Junction Temperature -40~150℃ Packing & Delivery Company Profile ...
2075. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
2076. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
2077. 100V 50A N-Mosfet Dsd190n10L3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2078. 10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
2079. Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 [Jun 23, 2025]
[Jun 23, 2025] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
2080. Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2081. 130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
2082. Hot Sale 15A 600V Fast Recovery Diode Murf1560 to-220f-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2083. 10A 200V Schottkybarrierdiode Mbre10200CT to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
2084. 4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
2085. 40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...
