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100V 50A N-Mosfet Dsd190n10L3
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2071.

100V 50A N-Mosfet Dsd190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f
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2072.

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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2073.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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2074.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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2075.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 15A 600V Fast Recovery Diode Murf1560 to-220f-2L
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2076.

Hot Sale 15A 600V Fast Recovery Diode Murf1560 to-220f-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottkybarrierdiode Mbre10200CT to-263
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2077.

10A 200V Schottkybarrierdiode Mbre10200CT to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b
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2078.

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn
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2079.

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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2080.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur8020CT to-3pn
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2081.

80A 200V Fast Recovery Diode Mur8020CT to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
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2082.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

High Voltage Mosfet Dje660n80e to-263
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2083.

High Voltage Mosfet Dje660n80e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b
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2084.

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
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2085.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd