Jiangsu Profile
Product List
1981. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1982. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
1983. 116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...
1984. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1985. 650V 10A Sic Schottky Barrier Diode Dce10d65g4 to-263 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1986. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1987. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1988. 20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1989. 60A 45V Schottkybarrierdiode Mbr6045nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...
1990. 45A 300V Fast Recovery Diode Mur4530DCT to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1991. 60A 200V Fast Recovery Diode Mur6020nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1992. 13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...
1993. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1994. 60A 300V Fast Recovery Diode Mur6030nct to-3pn [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1995. 8A 650V Sic Schottky Barrier Diode Dce08d65g4 to-263 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
