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33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b
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1981.

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263
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1982.

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263
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1983.

120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030ncs
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1984.

60A 300V Fast Recovery Diode Mur6030ncs Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode Mur80g40nct to-3pn
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1985.

80A 400V Fast Recovery Diode Mur80g40nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode Murf1040CT to-220f
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1986.

10A 400V Fast Recovery Diode Murf1040CT to-220f Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263
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1987.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263
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1988.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263
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1989.

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263
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1990.

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 10A Sic Schottky Barrier Diode Dce10d65g4 to-263
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1991.

650V 10A Sic Schottky Barrier Diode Dce10d65g4 to-263 Open Details in New Window [Jun 23, 2025]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b
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1992.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263
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1993.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263
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1994.

20A 650V Sic Schottky Barrier Diode Dce20d65g4 to-263 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn
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1995.

60A 45V Schottkybarrierdiode Mbr6045nct to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd