Jiangsu Profile
Product List
2011. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 
[Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
2012. 1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2013. China Manufacturing SMD dB107 dB107s 1A 1000V Diode Rectifier Bridge [Mar 30, 2022]
[Mar 30, 2022] Parameter Symbol DB101S DB102S DB1I03S DB104S D6105S DB1O6S DB107S unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS bridge input ...
2014. dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor [Jun 28, 2021]
[Jun 28, 2021] Specifications 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S) Features: 1)We are professional diode manufacturer 2)High Quality,Competitive Price 3)Flexible business mode Product ...
2015. 40V/4.5mΩ /40A N-Mosfet Dsr070n04la [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
2016. 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2017. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2018. 16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...
2019. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2020. 50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2021. 37A 650V N-Channel Sic Power Mosfet S37n65D to-247 [Jun 25, 2025]
[Jun 25, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...
2022. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
2023. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...
2024. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2025. 34mm 75A 1200V Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
