Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-Resistant ...
Contact Now

2026.

Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-Resistant ... Open Details in New Window [Jan 07, 2026]

Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-resistant Corrosion-resistant Folding-resistant Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...

Company: Jiangsu Xinyuanxing Metal Products Co., Ltd.

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263
Contact Now

2027.

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
Contact Now

2028.

200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
Contact Now

2029.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
Contact Now

2030.

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L
Contact Now

2031.

20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L Open Details in New Window [Nov 08, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
Contact Now

2032.

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 Open Details in New Window [Nov 08, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
Contact Now

2033.

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
Contact Now

2034.

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263
Contact Now

2035.

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Oxide and Borated Dumet Lead Wire for Diode
Contact Now

2036.

Oxide and Borated Dumet Lead Wire for Diode Open Details in New Window [Jun 27, 2025]

Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...

Company: Changzhou Capa New Materials Co., Ltd.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220
Contact Now

2037.

N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220 Open Details in New Window [Jun 25, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn
Contact Now

2038.

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn Open Details in New Window [Jun 25, 2025]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
Contact Now

2039.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
Contact Now

2040.

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd