Jiangsu Profile

Product List
2026. Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-Resistant ...
[Jan 07, 2026]
[Jan 07, 2026] Wafer Ring (12-inch) Dura420 SUS420J2 Stainless Steel Box Cassette for Wear-resistant Corrosion-resistant Folding-resistant Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
2027. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
2028. 200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
2029. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
2030. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
2031. 20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L
[Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2032. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
[Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
2033. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
2034. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
2035. 120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
2036. Oxide and Borated Dumet Lead Wire for Diode
[Jun 27, 2025]
[Jun 27, 2025] Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...
2037. N-Channel Enhancement Mode Power Mosfet 7A 650V 7n65 to-220
[Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2038. 80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn
[Jun 25, 2025]
[Jun 25, 2025] Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...
2039. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2040. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...



















