Jiangsu Profile
Product List
1936. High-Energy Ion Implanters Used in Integrated Circuits 
[Jul 30, 2025]
[Jul 30, 2025] Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
1937. High Temperature Furnace for Si and Sic Oxidation [Jul 22, 2025]
[Jul 22, 2025] Product Description The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. Thanks to the centrotherm ...
1938. 120V/25mΩ /36A N-Mosfet Dse270n12n3 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
1939. 8A 650V Sic Schottky Barrier Diode Sic0865 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SiC Schottky Barrier Diode SIC0865 to-247-2L 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high ...
1940. 62mm IGBT Module Dgb800h120L2t [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1941. 20A 400V Fast Recovery Diode Murf2040CT to-220f [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1942. 600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1943. 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1944. 650V 6A Sic Schottky Barrier Diode Dcgt06D65g4 to-220-2 [Jun 25, 2025]
[Jun 25, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1945. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...
1946. 180A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10u Toll Package [Jun 25, 2025]
[Jun 25, 2025] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 180 A ID(TC=100ºC) 115 A Pulsed Drain Current ...
1947. 96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...
1948. 170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
1949. 108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
1950. 96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
