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80A 400V Fast Recovery Diode MUR80FU40NCT TO-3PN
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1936.

80A 400V Fast Recovery Diode MUR80FU40NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F
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1937.

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power MOSFET DHE3205A TO-263
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1938.

100A 68V N-Channel Enhancement Mode Power MOSFET DHE3205A TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCE20D65G4 TO-263
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1939.

20A 650V SiC Schottky Barrier Diode DCE20D65G4 TO-263 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 500V N-Channel Enhancement Mode Power MOSFET E13N50 TO-263
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1940.

13A 500V N-Channel Enhancement Mode Power MOSFET E13N50 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MURF1060 TO-220F
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1941.

10A 600V Fast Recovery Diode MURF1060 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR60G30NCT TO-3PN
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1942.

60A 300V Fast Recovery Diode MUR60G30NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

116A 68V N-Channel Enhancement Mode Power MOSFET DHE070N06 TO-263
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1943.

116A 68V N-Channel Enhancement Mode Power MOSFET DHE070N06 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Fast Recovery Diode MUR40120 TO-220
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1944.

40A 1200V Fast Recovery Diode MUR40120 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15E TO-263
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1945.

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15E TO-263 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 85V N-Channel Enhancement Mode Power MOSFET DHS055N85E TO-263
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1946.

110A 85V N-Channel Enhancement Mode Power MOSFET DHS055N85E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DSE026N10NA TO-263
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1947.

180A 100V N-Channel Enhancement Mode Power MOSFET DSE026N10NA TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88E TO-263
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1948.

250A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V Fast Recovery Diode MUR2060A TO-220
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1949.

20A 600V Fast Recovery Diode MUR2060A TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN
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1950.

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd