Jiangsu Profile
Famous Export Brand
Product List
1966. 10A 400V N-Channel Enhancement Mode Power MOSFET F740 TO-220F 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1967. 20A 100V Schottky Barrier Diode MBR20R100CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1968. 40A 45V Schottky Barrier Diode MBR4045CT TO-263 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
1969. 40A 100V Schottky Barrier Diode MBR40100CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1970. 10A 700V Fast Recovery Diode MUR1070 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1971. 70A 40V N-Channel Enhancement Mode Power MOSFET D70N04 TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
1972. 320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
1973. 30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1974. 12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1975. 4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1976. 240A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS02 2N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1977. 120A 40V N-Channel Enhancement Mode Power MOSFET DH033N04F TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1978. 18A 100V P-Channel Enhancement Mode Power MOSFET DH100P18B TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1979. 145A 30V N-Channel Enhancement Mode Power MOSFET DH028N03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH028N0 3F DH028N03 /DH028N03E DH028N03B/DH028N03D Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1980. 10A 500V N-Channel Enhancement Mode Power MOSFET F10N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...
