Jiangsu Profile
Product List
1966. 650V 20A Sic Schottky Barrier Diode Dcgt20d65g4 to-220-2L 
[Jun 24, 2024]
[Jun 24, 2024] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1967. 10A 1200V Sic Schottky Barrier Diode Dcgt10d120g4 to-220-2 [Jun 24, 2024]
[Jun 24, 2024] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1968. 300A 40V N-Channel Enhancement Mode Power Mosfet Dsu010n04la Toll Package [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...
1969. 10A 650V Sic Schottky Barrier Diode Dcgt10d65g4 to-220-2 [Jun 24, 2024]
[Jun 24, 2024] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1970. 70A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06p Dfn5X6 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...
1971. 75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1972. 65A 1200V N-Channel Sic Power Mosfet Dcev040m120A2 to-263-7 [Jun 24, 2024]
[Jun 24, 2024] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
1973. 30mΩ 650V N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Jun 24, 2024]
[Jun 24, 2024] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1974. 54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...
1975. 55A 650V N-Channel Sic Power Mosfet Dcev030m65g2 to-263-7 [Jun 24, 2024]
[Jun 24, 2024] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
1976. 220A 20V N-Channel Enhancement Mode Power Mosfet Dh009n02p Dfn5X6 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
1977. 40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
1978. 47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
1979. 200V/11mΩ /110A N-Mosfet Dse108n20na to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
1980. 650V 8A Sic Schottky Barrier Diode Dcgt08d65g4 to-220-2 [Jun 24, 2024]
[Jun 24, 2024] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
